MIL-S-19500-513 Base Document:1976
Withdrawn
SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS) SILICON TYPES: 2N6605, 2N6606, 2N6607, 2N6608, NON-TX, TX, AND TXV (NO S/S DOCUMENT)
English
03-25-1976
10-12-1995
Specifies PNPN silicon low power, reverse-blocking-triode thyristors. "TX" used on devices passing special process-conditioning, testing and screening. "TXV" used on devices passing specified inspection
| DocumentType |
Standard
|
| Pages |
27
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
This specification covers the detail requirements for PNPN silicon low power, reverse-blocking -triode, thyristors, and is in accordance with MIL-S-19500 except as otherwise specified herein. The prefix \"TX\" is used on devices submitted to and passing the special process-conditioning, testing, and screening as specified in 4.6. The prefix \"TXV\" is used on devices submitted to and passing the inspection specified in 4.5 and 4.6.
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
| MIL S 19500 : J | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
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| MIL-STD-202 Revision H:2015 | Electronic and Electrical Component Parts |
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