MIL-S-19500-517 Base Document:1977
Superseded
View Superseded by
SEMICONDUCTOR DEVICE, SILICON, DIODE ARRAY, TYPE 1N6101 JAN, JANTX, AND JANTXV (S/S BY MIL-S-19500/474)
English
05-31-1977
07-23-2013
Specifies silicon, diode array. "TX" used on devices passing special process-conditioning, screening and testing. "TXV" used on devices which have passed internal visual inspection
| DocumentType |
Standard
|
| Pages |
12
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the detail requirements for silicon, diode array. The prefix \"TX\" is used on devices submitted to and passing the special process-conditioning, testing, and screening as specified in 4.5.1 through 4.5.8. The prefix \"TXV\" is used on devices which have been subjected to and have passed the internal visual inspection specified in 4.6.
| MIL-STD-883 Revision K:2016 | Microcircuits |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
| MIL S 19500 : J | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-202 Revision H:2015 | Electronic and Electrical Component Parts |
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