MIL S 19500/547 : A
Superseded
View Superseded by
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661, JAN, JANTX, JANTXV AND JANS
English
07-30-1999
Specifies N-channel, enhancement mode, low-threshold logic level, high frequency and switching speed MOSFET, power transistor used in high density power switching. Gives four levels of product assurance for each device type
| DocumentType |
Standard
|
| Pages |
26
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
| MIL S 19500 : J | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
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