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MIL S 19500/551 : B (1)

Superseded

Superseded

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SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N6461 THROUGH 1N6468 AND 1N6461US THROUGH 1N6468US JAN, JANTX, JANTXV, JANHC AND JANKC

Published date

01-12-2013

Superseded date

09-12-1999

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Specifies 500 watt peak pulse power silicon transient voltage suppressor diodes. Gives 3 levels of product assurance for each device. Includes standard and inverse polarity transients.

Committee
FSC 5961
DocumentType
Standard
PublisherName
US Military Specs/Standards/Handbooks
Status
Superseded
SupersededBy

MIL S 19500 : J SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR

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