MIL S 19500/600 : A
Superseded
View Superseded by
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7229 AND 2N7230 JANTX, JANTXV, JANS, JANHC AND JANKC
English
06-01-1997
Gives detail requirements for a N-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. For each encapsulated device type, three levels of product assurance are provided. Avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAS) are included. Each unencapsulated device type has two levels of product assurance provided.
| Committee |
FSC 5961
|
| DocumentType |
Standard
|
| Pages |
20
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
| MIL S 19500 : J | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
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