SN EN 60749-18 : 2003
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 18: IONIZING RADIATION (TOTAL DOSE)
01-12-2013
1 Scope<br>2 Terms and definitions<br>3 Test apparatus<br> 3.1 Radiation source<br> 3.2 Dosimetry system<br> 3.3 Electrical test instruments<br> 3.4 Test circuit board(s)<br> 3.5 Cabling<br> 3.6 Interconnect or switching system<br> 3.7 Environmental chamber<br>4 Procedure<br> 4.1 Sample selection and handling<br> 4.2 Burn-in<br> 4.3 Dosimetry measurements<br> 4.4 Lead/aluminium (Pb/Al) container<br> 4.5 Radiation level(s)<br> 4.6 Radiation dose rate<br> 4.6.1 Condition A<br> 4.6.2 Condition B<br> 4.6.3 Condition C<br> 4.7 Temperature requirements<br> 4.8 Electrical performance measurements<br> 4.9 Test conditions<br> 4.9.1 In-flux testing<br> 4.9.2 Remote testing<br> 4.9.3 Bias and loading conditions<br> 4.10 Post-irradiation procedure<br> 4.11 Extended room temperature anneal test<br> 4.11.1 Need to perform an extended room <br> temperature anneal test<br> 4.11.2 Extended room temperature anneal test <br> procedure <br> 4.12 MOS accelerated annealing test<br> 4.12.1 Need to perform accelerated annealing <br> test<br> 4.12.2 Accelerated annealing test procedure<br> 4.13 Test report<br>5 Summary
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