BS ISO 12406:2010
Current
The latest, up-to-date edition.
Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon
Hardcopy , PDF
English
30-11-2010
Foreword
Introduction
1 Scope
2 Normative references
3 Terms and definitions
4 Symbols and abbreviated terms
5 Principle
6 Reference materials
7 Apparatus
8 Specimen
9 Procedures
10 Expression of results
11 Test report
Annex A (informative) - Report of round robin test of depth
profiling of arsenic in silicon
Annex B (normative) - Procedures for the depth profiling of
NIST SRM 2134
Bibliography
Describes a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration.
| Committee |
CII/60
|
| DevelopmentNote |
Supersedes 10/30199169 DC. (11/2010) Reviewed and confirmed by BSI, August 2016. (07/2016)
|
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1×1016 atoms/cm3 and 2,5×1021 atoms/cm3, and to crater depths of 50nm or deeper.
| Standards | Relationship |
| ISO 12406:2010 | Identical |
| ISO 18114:2003 | Surface chemical analysis — Secondary-ion mass spectrometry — Determination of relative sensitivity factors from ion-implanted reference materials |
| ISO 18115-1:2013 | Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in spectroscopy |
| ISO 14237:2010 | Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials |
| ISO 17560:2014 | Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon |
| ISO 5725-2:1994 | Accuracy (trueness and precision) of measurement methods and results — Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method |
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