ISO 12406:2010
Current
The latest, up-to-date edition.
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
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English
08-11-2010
ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
| DevelopmentNote |
Supersedes ISO/DIS 12406. (11/2010)
|
| DocumentType |
Standard
|
| Pages |
13
|
| PublisherName |
International Organization for Standardization
|
| Status |
Current
|
| Standards | Relationship |
| BS ISO 12406:2010 | Identical |
| NEN ISO 12406 : 2010 | Identical |
| SAC GB/T 32495 : 2016 | Identical |
| ISO 18114:2003 | Surface chemical analysis — Secondary-ion mass spectrometry — Determination of relative sensitivity factors from ion-implanted reference materials |
| ISO 18115-1:2013 | Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in spectroscopy |
| ISO 14237:2010 | Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials |
| ISO 17560:2014 | Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon |
| ISO 5725-2:1994 | Accuracy (trueness and precision) of measurement methods and results — Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method |
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