ASTM F 1032 : 1991
Withdrawn
Withdrawn
Guide for Measuring Time-Dependant Total-Dose Effects in Semiconductor Devices Exposed to Pulsed Ionizing Radiation (Withdrawn 1994)
Published date
12-31-2010
Withdrawn date
05-01-1996
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CONTAINED IN VOL 10.04 Gives prerequisites and methods for testing semiconductor devices, both discrete and integrated circuits, for time-dependent effects from short pulse (less than 60 micro m) exposures to ionizing radiation. May produce severe degradation of electrical properties of irradiated devices and should be considered as destructive.
| Committee |
ASTM
|
| DocumentType |
Guide
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Withdrawn
|
| ASTM F 980M : 1996 : R2003 | Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric] |
| MIL-HDBK-817 Base Document:1994 | System Development Radiation Hardness Assurance |
| ASTM F 980M : 1996 | Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices [Metric] |
| ASTM F 526 : 2016 : REDLINE | Standard Test Method for Using Calorimeters for Total Dose Measurements in Pulsed Linear Accelerator or Flash X-ray Machines |
| ASTM E 668 : 2013 : REDLINE | Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices |
| ASTM E 820 : 1981 | Practice for Determining Absolute Absorbed Dose Rates for Electron Beams (Withdrawn 1987) |
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