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ASTM F 1262M : 2014

Current

Current

The latest, up-to-date edition.

Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric)

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

06-01-2014

1.1This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy (matl.)/s.

1.1.1Discussion—This document is intended to be a guide to determine upset threshold, and is not intended to be a stand-alone document.

1.2This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Committee
F 01
DocumentType
Guide
Pages
6
PublisherName
American Society for Testing and Materials
Status
Current

ASTM F 1893 : 1998 Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
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ASTM F 1893 : 2018 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices (Withdrawn 2023)
ASTM F 1893 : 2011 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
ASTM E 666 : 2014 Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation

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