BIS IS/IEC 61558-2-6 : 1ED 2016
NA
SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 44: NEUTRON BEAM IRRADIATED SINGLE EVENT EFFECT (SEE) TEST METHOD FOR SEMICONDUCTOR DEVICES
08-09-2016
FOREWORD<br>1 Scope<br>2 Normative references<br>3 Terms and definitions<br>4 Test apparatus<br>5 Procedure neutron irradiated soft error test<br>6 Evaluation<br>7 Summary<br>Annex A (informative) - Additional information for the<br> applicable procurement specification<br>Annex B (informative) - White neutron test apparatus<br>Annex C (informative) - Failure rate calculation<br>Bibliography
Defines a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays.
| Committee |
TC 47
|
| DevelopmentNote |
Stability Date: 2020. (07/2016)
|
| DocumentType |
Standard
|
| PublisherName |
Bureau of Indian Standards
|
| Status |
NA
|
| SupersededBy | |
| Supersedes |
| Standards | Relationship |
| CEI EN 60749-44 : 1ED 2017 | Identical |
| EN 60749-44:2016 | Identical |
| NEN EN IEC 60749-44 : 2016 | Identical |
| NF EN 60749-44 : 2016 | Identical |
| BS EN 60749-44:2016 | Identical |
| DIN EN 60749-44:2017-04 | Identical |
| PN EN 60749-44 : 2017 | Identical |