I.S. EN 62374:2007
Withdrawn
SEMICONDUCTOR DEVICES - TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR GATE DIELECTRIC FILMS
Hardcopy , PDF
English
01-24-2008
11-24-2010
For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.
Only cited Standards give presumption of conformance to New Approach Directives/Regulations.
FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
4.1 General
4.2 Test structure: capacitor structure
4.3 Area
5 Procedures
5.1 General
5.2 Pre-test
5.3 Test conditions
5.4 Criteria
6 Lifetime estimation
6.1 General
6.2 Acceleration model
6.3 A procedure for a lifetime estimation
7 Lifetime dependence on gate oxide area
Annex A (informative) Supplementary determining test condition
and data analysis
Bibliography
Gives a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure.
| DevelopmentNote |
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
|
| DocumentType |
Standard
|
| Pages |
50
|
| PublisherName |
National Standards Authority of Ireland
|
| Status |
Withdrawn
|
| Standards | Relationship |
| EN 62374:2007 | Identical |
| IEC 62374:2007 | Identical |
| BS EN 62374:2007 | Equivalent |
| UNE-EN 62374:2007 | Equivalent |
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