IEC 60333:1993

FOREWORD
Clause
1 Scope and object
2 Normative references
3 General requirements
4 Resolution measurements
  4.1 Energy resolution
  4.2 Time resolution
  4.3 Position, resolution and linearity of a
      position-sensitive detector
5 Noise measurement
  5.1 Noise measurement by pulse-height distribution
      (preferred method)
  5.2 Noise measurement by oscilloscope and true
      root-mean-square voltmeter
  5.3 Measurement of electronic noise with the detector
      removed
  5.4 Determination of detector contribution to noise and
      resolution
  5.5 Noise linewidth (FWHM) as a function of amplifier
      shaping time index
6 Sensitivity to ambient conditions
  6.1 Atmospheric sensitivity
  6.2 Vacuum thermal cycle test
  6.3 Mechanical and environmental tests
  6.4 Light sensitivity
  6.5 Radiation damage measurements
7 Other measurements
  7.1 Current-voltage characteristics
  7.2 Dead layer energy loss
  7.3 Sensitive area
  7.4 Detector thickness (transmission detectors)
  7.5 Capacitance-voltage characteristics
Annexes
A Symbols and glossary
B General information concerning semiconductor
  charged-particle detectors
C Bibliography

Applies to semiconductor radiation detectors which are used for the detection and high-resolution spectroscopy of charged particles. The measurement techniques described have been selected to be readily available to all manufacturers and users of semiconductor charged-particle detectors.