IEC 60749-2:2002
Current
Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure
Hardcopy , PDF
04-12-2002
FOREWORD
INTRODUCTION
1 Scope
2 Normative references
3 Test apparatus
4 Procedure
5 Summary
Covers the testing of low air pressure on semiconductor devices. The test is intended primarily to determine the ability of component parts and materials to avoid voltage breakdown failures due to the reduced dielectric strength of air and other insulating materials at reduced pressures is only applicable to devices where the operating voltage exceeds 1 000 V.This test is applicable to all semiconductor devices provided they are in cavity type packages. The test is intended for military and space-related applications only.The contents of the corrigendum of August 2003 have been included in this copy.
| Committee |
TC 47
|
| DevelopmentNote |
Supersedes IEC 60749. (03/2008) Stability Date: 20121. (11/2017)
|
| DocumentType |
Standard
|
| Pages |
11
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Supersedes |
| Standards | Relationship |
| NF EN 60749-2 : 2002 | Identical |
| NEN EN IEC 60749-2 : 2002 | Identical |
| I.S. EN 60749-2:2002 | Identical |
| PN EN 60749-2 : 2004 | Identical |
| BS EN 60749-2:2002 | Identical |
| CEI EN 60749-2 : 2004 | Identical |
| EN 60749-2:2002 | Identical |
| UNE-EN 60749-2:2003 | Identical |
| DIN EN 60749-2:2003-04 | Identical |
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