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IEC 60749-22:2002

Superseded

Superseded

Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength

Available format(s)

Hardcopy , PDF

Published date

09-12-2002

Superseded date

11-26-2025

US$228.00
Excluding Tax where applicable
Summarise this standard

FOREWORD
INTRODUCTION
1 Scope and object
   1.1 General description of the test
   1.2 Description of the test apparatus (for all methods)
2 Methods A and B (see also annex A)
   2.1 Scope
   2.2 General description of the test
3 Method C
   3.1 Scope
   3.2 Method C: Bond peel
4 Method D
   4.1 Scope
   4.2 Method D: Bond shear (applied to flip chip)
5 Methods E and F
   5.1 Scope
   5.2 Method E: Push-off test
   5.3 Method F: Pull-off test
   5.4 Failure criteria for both methods E and F
   5.5 Force to be applied (both methods)
6 Method G: Wire ball shear test
   6.1 Scope
   6.2 General description
   6.3 Terms and definitions
   6.4 Equipment and material
   6.5 Procedure
   6.6 Acceptable test limits
7 Information to be given in the relevant specification
Annex A (normative) Guidance

Applicable to semiconductor devices (discrete devices and integrated circuits), this test measures bond strength or determine compliance with specified bond strength requirements. The contents of the corrigendum of August 2003 have been included in this copy.

Committee
TC 47
DevelopmentNote
Supersedes IEC 60749. (03/2008) Stability Date: 2018. (11/2017)
DocumentType
Standard
Pages
41
PublisherName
International Electrotechnical Committee
Status
Superseded
Supersedes

US$228.00
Excluding Tax where applicable