MIL-PRF-19500-477 Revision L:2016
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast Recovery, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, and 1N5811, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
05-23-2016
06-23-2020
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for silicon, fast recovery, power rectifier diodes.
| DevelopmentNote |
Supersedes MIL S 19500/477 (B). (03/2006)
|
| DocumentType |
Standard
|
| Pages |
113
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for silicon, ultrafast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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