MIL S 19500/477 : B
Superseded
Superseded
View Superseded by
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, TYPES 1N5802, IN5804, 1N5806, 1N5807, 1N5809 AND 1N5811, 1N5802US, 1N5804US, 1N5806US, 1N5809US, AND 1N5811US, JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
Available format(s)
PDF
Language(s)
English
Publisher
Superseded date
01-13-1999
Superseded by
US$20.00
Excluding Tax where applicable
Specifies silicon, fast recovery, power rectifier diodes. Gives four levels of product assurance for each device type
| Committee |
FSC 5961
|
| DocumentType |
Standard
|
| Pages |
20
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
| MIL-C-64030 Base Document:1986 | Control, Indicator, for Dispenser and Mines: Ground M131 |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
| MIL S 19500 : J | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
Summarise
US$20.00
Excluding Tax where applicable
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