MIL-PRF-19500-617 Revision E:2014
Current
Semiconductor Devices, Diode, Silicon, Power Rectifier, Ultrafast Recovery, Dual (Common Cathode or Common Anode, Center Tap), Types 1N6672 Through 1N6674, Standard and Reverse Polarity, Quality Levels JAN, JANTX, JANTXV, and JANS
English
12-19-2014
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes.
| DevelopmentNote |
Supersedes MIL S 19500/617. (04/2006)
|
| DocumentType |
Standard
|
| Pages |
13
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for silicon, high voltage, ultra-fast recovery, power rectifier diodes in a dual die, center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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