MIL S 19500/617 : 0
Superseded
View Superseded by
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THRU 1N6674 AND 1N6672R THRU 1N6674R, JANTX, JANTXV AND JANS
English
10-15-1997
Detailed requirements for silicon, dual high voltage, ultrafast power rectifier diodes. Provides three levels of product assurance for each device type as specified in MIL-S-19500
| Committee |
FSC 5961
|
| DocumentType |
Standard
|
| Pages |
10
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
| MIL S 19500 : J | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
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