MIL-PRF-19500-631 Revision B:2004
Withdrawn
View Superseded by
Transistor, Field Effect, N-Channel Silicon, Radiation Hardened (Total Dose and Single Event Effects), Types 2N7395, 2N7396, 2N7397, and 2N7398, Quality Levels JANSD and JANSR (NO S/S DOCUMENT)
03-09-2004
08-28-2025
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Covers performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications.
| DevelopmentNote |
B NOTICE 1 - Notice of Validation. (07/2011) B NOTICE 2 - Notice of Validation. (05/2016)
|
| DocumentType |
Standard
|
| Pages |
28
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
| SupersededBy |
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization only), power transistors. One level of product assurance (JANS)is provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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