MIL-PRF-19500-634 Revision D:2013
Withdrawn
View Superseded by
Transistor, Field Effect, N-Channel Silicon, Flange Mount Package, Radiation Hardened (Total Dose Only), Types 2N7405, 2N7406, 2N7407, and 2N7408, Quality Levels JANSD and JANSR (No S/S Document)
English
12-06-2013
08-28-2025
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effect (SEE) characterization), power transistor intended for use in high density power switching applications.
| DocumentType |
Standard
|
| Pages |
23
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
| SupersededBy |
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. One level of product assurance (JANS) is provided for each device type as specified in MIL-PRF-19500
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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