MIL-PRF-19500-634 Revision E:2019
Withdrawn
Transistor, Field Effect, N-Channel Silicon, Flange Mount Package, Radiation Hardened (Total Dose Only), Types 2N7405, 2N7406, 2N7407, and 2N7408, Quality Levels JANSD and JANSR (No S/S Document)
English
10-29-2019
08-28-2025
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications.
| DocumentType |
Standard
|
| Pages |
23
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
| Supersedes |
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. One level of product assurance (JANS) is provided for each device type as specified in MIL-PRF-19500
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