MIL-PRF-19500-643 Revision C:2007
Superseded
View Superseded by
Semiconductor Device, Unitized, Diode, Silicon, Power Rectifier, Ultrafast, Dual (Common Cathode or Common Anode Center Tap) Types 1N6766 and 1N6767, Standard and Reverse Polarity, Quality Levels JAN, JANTX, JANTXV, and JANS
08-24-2007
12-21-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration.
| DevelopmentNote |
C NOTICE 1 - Notice of Validation. (11/2016)
|
| DocumentType |
Standard
|
| Pages |
23
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for silicon, high voltage, ultrafast, power rectifier diodes in a dual die, center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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