MIL-PRF-19500-643 Revision D:2020
Superseded
View Superseded by
Semiconductor Device, Unitized, Diode, Silicon, Power Rectifier, Ultrafast, Dual (Common Cathode or Common Anode Center Tap) Types 1N6766 and 1N6767, Standard and Reverse Polarity, Quality Levels JAN, JANTX, JANTXV, and JANS
English
05-27-2020
12-21-2021
This specification covers the performance requirements for silicon, high voltage, ultrafast, power rectifier diodes in a dual die, center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
| DocumentType |
Standard
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| Pages |
11
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for silicon, high voltage, ultrafast, power rectifier diodes in a dual die, center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.
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