MIL-PRF-19500-702 Revision E:2016
Superseded
View Superseded by
Transistor,Field Effect, N-Channel,Radiation Hardened, Silicon, Encapsulated (Through Hole Package), Types 2N7482, 2N7483, and 2N7484, JANTXVR, F, G, and H and JANSR, F, G, and H
English
06-24-2016
04-30-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
| DocumentType |
Standard
|
| Pages |
23
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to four radiation levels (\"R\", \"F\", \"G\" and \"H\") are provided for JANTXV and JANS product assurance levels.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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