MIL-PRF-19500-702 Revision E Amendment 1 (amendment incorporated):2019
Current
Transistor,Field Effect, N-Channel,Radiation Hardened, Silicon, Encapsulated (Through Hole Package), Types 2N7482, 2N7483, and 2N7484, JANTXVR, F, G, and H and JANSR, F, G, and H
English
04-26-2019
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
| DocumentType |
Standard
|
| Pages |
23
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to four radiation levels (\"R\", \"F\", \"G\" and \"H\") are provided for JANTXV and JANS product assurance levels.
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