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MIL-STD-989 Base Document:1991

Withdrawn

Withdrawn

CERTIFICATION REQUIREMENTS FOR JAN SEMICONDUCTOR DEVICES (NO S/S DOCUMENT)

Available format(s)

PDF

Language(s)

English

Published date

11-11-1991

Withdrawn date

07-28-1995

US$20.00
Excluding Tax where applicable

Establishes the minimum requirements for the certification of manufacturing facilities/lines used in fabricating, assembling and testing high reliability JAN semiconductors in accordance with MIL-S-19500.

DocumentType
Standard
Pages
32
PublisherName
US Military Specs/Standards/Handbooks
Status
Withdrawn

This standard establishes the minimum requirements for the certification of manufacturing facilities/lines (s) used in fabricating, assembling, and testing high reliability JAN semiconductors in accordance the MIL-S-19500.

DOD 4120.3M : 1993 DEFENSE STANDARDIZATION PROGRAM (DSP) POLICIES AND PROCEDURES OFFICE OF THE ASSISTANT SECRETARY OF DEFENSE PRODUCTION AND LOGISTICS

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ASTM F 613 : 1993 Test Method for Measuring Diameter of Semiconductor Wafers (Withdrawn 2001)
ASTM F 416 : 1994 Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers (Withdrawn 1998)
MIL-STD-1686 Revision C:1995 Electrostatic Discharge Control Program for Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive Devices) (S/S by ANSI/ESD S20.20)
MIL-STD-45662 Revision A:1988 Calibration Systems Requirements (Refer to ISO-10012-1 and ANSI-Z540-1 or Comparable Standards as Alternatives to MIL-STD-45662)
MIL-HDBK-279 Base Document:1985 Total Dose Hardness Assurance Guideline for Semiconductor Device and Microcircuit (S/S by MIL-HDBK-814)
MIL-STD-750 Revision F:2011 Test Methods for Semiconductor Devices
DOD HDBK 263 : LATEST ELECTROSTATIC DISCHARGE CONTROL HANDBOOK FOR PROTECTION OF ELECTRICAL AND ELECTRONIC PARTS, ASSEMBLIES AND EQUIPMENT (EXCLUDING ELECTRICALLY INITIATED EXPLOSIVE DEVICES)METRIC
MIL S 19500 : J SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
ASTM F 657 : 1992 : R1999 Standard Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning (Withdrawn 2003)
ASTM F 43 : 1999 Standard Test Methods for Resistivity of Semiconductor Materials (Withdrawn 2003)
ASTM F 120 : 1988 Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy (Withdrawn 1993)
MIL-HDBK-280 Base Document:1985 Neutron Hardness Assurance Guidelines for Semiconductor Devices and Microcircuits (S/S by MIL-HDBK-814)
ASTM F 47 : 1994 Test Method for Crystalographic Perfection of Silicon by Preferential Etch Techniques (Withdrawn 1998)
ASTM F 121 : 1983 : EDT 1 Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption (Withdrawn 1989)

US$20.00
Excluding Tax where applicable