ASTM F 120 : 1988
Withdrawn
Withdrawn
Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy (Withdrawn 1993)
Published date
12-31-2010
Withdrawn date
12-31-1993
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CONTAINED IN VOL 10.05 1996 Determines concentration of impurities in semiconductor materials using either simple or computer assisted dispersive or Fourier transform infrared spectrophotometers. Concentration determined from intensity of infrared absorption bands characteristic of impurities. Impurity content can be determined, if transparent and has absorption bands in infrared region of spectrum.
| DocumentType |
Standard Practice
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Withdrawn
|
| MIL-STD-989 Base Document:1991 | CERTIFICATION REQUIREMENTS FOR JAN SEMICONDUCTOR DEVICES (NO S/S DOCUMENT) |
| ASTM F 121 : 1983 : EDT 1 | Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption (Withdrawn 1989) |
| ASTM F 122 : 1974 : R1985 | Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption (Withdrawn 1990) |
| ASTM F 122 : 1974 : R1985 | Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption (Withdrawn 1990) |
| ASTM F 121 : 1983 : EDT 1 | Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption (Withdrawn 1989) |
| ASTM E 168 : 2016 | Standard Practices for General Techniques of Infrared Quantitative Analysis |
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