BS 3934:1965
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Specification for dimensions of semiconductor devices and integrated electronic circuits
Available format(s)
Hardcopy , PDF
Language(s)
English
Published date
30-11-1965
Publisher
Superseded date
01-04-1992
$531.66
Including GST where applicable
Drawings of outline bases and gauges of various forms of semiconductor device. Guidance on the interpretation and use of drawings. Cross reference index.
| Committee |
EPL/47
|
| DocumentType |
Standard
|
| Pages |
270
|
| PublisherName |
British Standards Institution
|
| Status |
Superseded
|
| SupersededBy |
| Standards | Relationship |
| IEC 60191-1:2007 | Similar to |
| IEC 60191-3A:1976 | Similar to |
| IEC 60191-2:2012 DB | Similar to |
| BS QC 750005:1987 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes |
| BS EN 150007:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for high frequency amplification |
| BS EN 120006:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: pin-photodiodes for fibre optic applications |
| BS G 209:1970 | Specification for transformer rectifier units |
| BS EN 150003:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for low frequency amplification |
| BS QC 750001:1986 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Signal diodes, switching diodes and controlled avalanche diodes |
| BS 9305 N001:1972 | Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q |
| BS QC 750103:1990 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification |
| BS 9301 N002:1971 | Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q |
| BS EN 150011:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated thyristors |
| BS 9364 N016:1979 | Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS CECC 90000:1991 | Harmonized system of quality assessment for electronic components. Generic specification: monolithic integrated circuits |
| BS CECC 20000:1983 | Harmonized system of quality assessment for electronic components: generic specification: semiconductor optoelectronic and liquid crystal devices |
| BS CECC 90000:1985 | Harmonized system of quality assessment for electronic components. Generic specification: monolithic integrated circuits |
| BS 9305 N041:1972 | Detail specification for silicon voltage regulator diodes. 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation. General application category Q |
| BS CECC 90104:1981 | Specification for harmonized system of quality assessment for electronic components. Family specification: C. Mos digital integrated circuits, series 4000B and 4000UB |
| BS EN 150012:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: single gate field-effect transistors |
| BS QC 750110:1990 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Reverse blocking triode thyristors, ambient and case-rated, up to 100 A |
| BS EN 120002:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: infrared emitting diodes, infrared emitting diode arrays |
| BS 9364 N017:1979 | Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
| BS QC 750107:1991 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications |
| BS EN 150010:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient rated thyristors |
| BS CECC 50008:1982 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes |
| BS EN 120003:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays |
| BS 6493-1.1:1984 | Semiconductor devices. Discrete devices General |
| BS CECC 63000:1990 | Harmonized system of quality assessment for electronic components. Generic specification: film and hybrid integrated circuits |
| BS CECC 90103:1983 | Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL low power SCHOTTKY circuits, series 54LS, 64LS, 74LS, 84LS |
| BS CECC 50000:1987 | Harmonized system of quality assessment for electronic components. Generic specification: discrete semiconductor devices |
| BS 9450:1998 | Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures). Generic data and methods of test |
| BS CECC 90104:1990 | Specification for harmonized system of quality assessment for electronic components. Family specification: C. MOS digital integrated circuits series 4000 B and 4000 UB |
| BS 9364 N013:1979 | Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS EN 150004:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: bipolar transistors for switching applications |
| BS 6943:1988 | Classification of shapes of electronic components for placement on printed wiring boards |
| BS EN 150013:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: current regulator and current reference diodes |
| BS QC 750108:1990 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A |
| BS 9364 N008 and N010:1978 | Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
| BS EN 120000:1996 | Harmonized system of quality assessment for electronic components. General specification: semiconductor optoelectronic and liquid crystal devices |
| BS 9400:1970 | Specification for integrated electronic circuits and micro-assemblies of assessed quality (qualification approval procedures): generic data and methods of test |
| BS 9300:1969 | Specification for semiconductor devices of assessed quality: generic data and methods of test |
| BS CECC 90103:1980 | Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL low power SCHOTTKY circuits, series 54LS, 64LS, 74LS, 84LS |
| BS EN 150006:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Variable capacitance diode(s) |
| BS EN 120005:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications) |
| BS EN 150001:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: general purpose semiconductor diodes |
| BS QC 750112:1988 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz |
| BS E9375:1975 | Specification. Harmonized system of quality assessment for electronic components. Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes |
| BS 9305 N042:1972 | Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C |
| BS 9364 N007 and N009:1978 | Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS QC 760000:1990 | Harmonized system of quality assessment for electronic components. Film and hybrid film integrated circuits. Generic specification |
| BS EN 120004:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output |
| BS 9450:1975 | Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures): generic data and methods of test |
| BS CECC 90101:1980 | Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL circuits, series 54, 64, 74, 84 |
| BS QC 750102:1990 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification |
| BS CECC 50009:1982 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes |
| BS 9305 N044:1974 | Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level |
| BS 9364 N012:1978 | Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
| BS 9364 N011:1978 | Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS EN 190000:1996 | Harmonized system of quality assessment for electronic components. Generic specification: monolithic integrated circuits |
| BS E9372:1976 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated bipolar transistors for low and high frequency amplification |
| EN 190000:1995 | Generic Specification: Monolithic integrated circuits |
| EN 150012 : 1991 | Blank Detail Specification: Single gate field-effect transistors |
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$531.66
Including GST where applicable
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