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IEC 61643-341:2001

Superseded
Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

Components for low-voltage surge protective devices - Part 341: Specification for thyristor surge suppressors (TSS)
Available format(s)

Hardcopy , PDF 1 User , PDF 3 Users , PDF 5 Users , PDF 9 Users

Superseded date

31-12-2021

Language(s)

English - French, Spanish, Castilian

Published date

23-11-2001

FOREWORD
1 Scope
2 Normative references
3 Terms, letter symbols and definitions
   3.1 Parametric terms, letter symbols and definitions
        3.1.1 Main terminal ratings
        3.1.2 Main terminal characteristics
        3.1.3 Additional and derived parameters
        3.1.4 Temperature related parameters
        3.1.5 Gate terminal parameters
   3.2 Terms and definitions for TSS, terminals and
        characteristic terminology
        3.2.1 TSS
        3.2.2 Terminals
        3.2.3 Characteristic terminology
4 Basic function and component description
   4.1 TSS types
   4.2 Basic device structure
   4.3 Device equivalent circuit
   4.4 Switching quadrant characteristics
        4.4.1 Off-state region
        4.4.2 Breakdown region
        4.4.3 Negative resistance region
        4.4.4 On-state region
   4.5 Performance criteria of TSS
        4.5.1 System loading
        4.5.2 Equipment protection
        4.5.3 Durability
   4.6 Additional TSS structures
        4.6.1 Gated TSS
        4.6.2 Unidirectional blocking TSS
        4.6.3 Unidirectional conducting TSS
        4.6.4 Bidirectional TSS
        4.6.5 Bidirectional TRIAC TSS
5 Standard test methods
   5.1 Test conditions
        5.1.1 Standard atmospheric conditions
        5.1.2 Measurement errors
        5.1.3 Measurement accuracy
        5.1.4 Designated impulse shape and values
        5.1.5 Multiple TSS
        5.1.6 Gated TSS testing
   5.2 Service conditions
        5.2.1 Normal service conditions
        5.2.2 Abnormal service conditions
   5.3 Failures and fault modes
        5.3.1 Degradation failure
        5.3.2 High-off state current fault mode
        5.3.3 High reverse current fault mode
        5.3.4 High breakdown voltage fault mode
        5.3.5 Low holding current fault mode
        5.3.6 Catastrophic (cataleptic) failure
        5.3.7 Short-circuit fault mode
        5.3.8 Open-circuit fault mode
        5.3.9 Critical failure
        5.3.10 Fail-safe
   5.4 Rating test procedures
        5.4.1 Repetitive peak off-state voltage - V[DRM]
        5.4.2 Repetitive peak on-state current - I[TRM]
        5.4.3 Non-repetitive peak on-state current, I[TSM]
        5.4.4 Non-repetitive peak pulse current, I[ppsm]
        5.4.5 Repetitive peak reverse voltage, V[RRM]
        5.4.6 Non-repetitive peak forward current, I[FSM]
        5.4.7 Repetitive peak forward current, I[FRM]
        5.4.8 Critical rate of rise of on-state current,
               di/dt
   5.5 Characteristic test procedures
        5.5.1 Off-state current, I[D]
        5.5.2 Repetitive peak off-state current - I[DRM]
        5.5.3 Repetitive peak reverse current - I[RRM]
        5.5.4 Breakover voltage - V[(BO)] and current,
               I[(BO)]
        5.5.5 On-state voltage, V[T]
        5.5.6 Holding current, I[H]
        5.5.7 Off-state capacitance, C[O]
        5.5.8 Breakdown voltage, V[(BR)]
        5.5.9 Switching voltage, V[S] and current I[S]
        5.5.10 Forward voltage, V[F]
        5.5.11 Peak forward recovery voltage, V[FRM]
        5.5.12 Critical rate of rise of off-state voltage,
               dv/dt
        5.5.13 Temperature coefficient of breakdown voltage,
               V[(BR)]
        5.5.14 Variation of holding current with temperature
        5.5.15 Temperature derating
        5.5.16 Thermal resistance, R[th]
        5.5.17 Transient thermal impedance, Z[th(t)]
        5.5.18 Gate-to-adjacent terminal peak off-state
               voltage and peak off-state gate current,
               V[GDM] and I[GDM]
        5.5.19 Gate reverse current, adjacent terminal open,
               I[GAO], I[GKO]
        5.5.20 Gate reverse current, main terminals
               short-circuited, I[gas], IGKS]
        5.5.21 Gate reverse current, on-state I[GAT], I[GKT]
        5.5.22 Gate reverse current, forward conducting state,
               I[GAF], I[GKF]
        5.5.23 Gate switching charge, Q[GS]
        5.5.24 Peak gate switching current, I[GSM]
        5.5.25 Gate-to-adjacent terminal breakover voltage,
               V[GK(BO)], V[GA(BO)]
Annex A (normative) Abnormal service conditions
Annex B (informative) US verification standards with referenced
        impulse waveforms

Is a test specification standard for thyristor surge suppressor (TSS) components designed to limit overvoltages and divert surge currents by clipping and crowbarring actions. Such components are used in the construction of surge protective devices, particularly as they apply to telecommunications.This standard contains information on-terms, letter symbols, and definitions-basic functions, configurations and component structure-service conditions and fault modes-rating verification and characteristic measurement.

Committee
TC 37/SC 37B
DevelopmentNote
Stability Date: 2018. (09/2017)
DocumentType
Standard
Pages
123
PublisherName
International Electrotechnical Committee
Status
Superseded
SupersededBy

CLC/TS 61643-22:2016 Low-voltage surge protective devices - Part 22: Surge protective devices connected to telecommunications and signalling networks - Selection and application principles
PD CLC/TS 61643-22:2016 Low-voltage surge protective devices Surge protective devices connected to telecommunications and signalling networks. Selection and application principles
IEC 61643-22:2015 Low-voltage surge protective devices - Part 22: Surge protective devices connected to telecommunications and signalling networks - Selection and application principles
S.R. CLC/TS 61643-22:2016 LOW-VOLTAGE SURGE PROTECTIVE DEVICES - PART 22: SURGE PROTECTIVE DEVICES CONNECTED TO TELECOMMUNICATIONS AND SIGNALLING NETWORKS - SELECTION AND APPLICATION PRINCIPLES

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IEC 60721-3-9:1993 Classification of environmental conditions - Part 3: Classification of groups of environmental parameters and their severities - Section 9: Microclimates inside products
IEC 60099-4:2014 Surge arresters - Part 4: Metal-oxide surge arresters without gaps for a.c. systems
IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
IEC 60749:1996+AMD1:2000+AMD2:2001 CSV Semiconductor devices - Mechanical and climatic test methods
IEC 60721-3-3:1994+AMD1:1995+AMD2:1996 CSV Classification of environmental conditions - Part 3-3: Classification of groups of environmental parameters and their severities - Stationary use at weatherprotected locations
IEC 60747-6:2016 Semiconductor devices - Part 6: Discrete devices - Thyristors
IEC 61083-1:2001 Instruments and software used for measurement in high-voltage impulse tests - Part 1: Requirements for instruments
IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes

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