BS EN 60749-23 : 2004
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE
Hardcopy , PDF
English
01-01-2004
1 Scope
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Procedure
6 Cool-down
7 Measurements
8 Failure criteria
9 Summary
Annex ZA (normative) - Normative references to
international publications with their
corresponding European publications
Specifies the effects of bias conditions and temperature on solid state devices over time.
| Committee |
EPL/47/1
|
| DevelopmentNote |
Supersedes 02/206196 DC. (10/2004) 2004 Edition Re-Issued in June 2011 & incorporates AMD 1 2011. Supersedes 09/30208089 DC. (06/2011)
|
| DocumentType |
Standard
|
| Pages |
12
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
| Standards | Relationship |
| DIN EN 60749-23:2011-07 | Identical |
| IEC 60749-23:2004+AMD1:2011 CSV | Identical |
| NBN EN 60749-23 : 2005 AMD 1 2011 | Identical |
| NF EN 60749-23 : 2004 AMD 1 2012 | Identical |
| I.S. EN 60749-23:2004 | Identical |
| EN 60749-23:2004/A1:2011 | Identical |
| EN 60749-23:2004 | Equivalent |
| UNE-EN 60749-23:2005 | Identical |
| EN 60749-34:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling |
| IEC 60749-34:2010 | Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling |
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