DSCC V62/25656:2025
Current
Current
The latest, up-to-date edition.
MICROCIRCUIT, LINEAR, BiCMOS, NEAR-DC TO >14GHz, SINGLE-ENDED-TO-DIFFERENTIAL RF AMPLIFIER, MONOLITHIC SILICON
Published date
15-12-2025
Publisher
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This drawing documents the general requirements of a high performance single-ended-to-differential RF amplifier microcircuit, with an operating temperature range of -55C to +125C.
| DocumentType |
Standard
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| PublisherName |
Defense Supply Centre Columbus
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| Status |
Current
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| JEDEC JESD 22-C101C:2004 | FIELD-INDUCED CHARGED-DEVICE MODEL TEST METHOD FOR ELECTROSTATIC DISCHARGE WITHSTAND THRESHOLDS OF MICROELECTRONIC COMPONENTS |
| JEDEC JEP155B:2018(R2024) | Recommended ESD Target Level for HBM Qualification |
| ANSI/ESDA/JEDEC JS-001:2024 | JOINT JEDEC/ESDA STANDARD FOR ELECTROSTATIC DISCHARGE SENSITIVITY TEST - HUMAN BODY MODEL (HBM) - DEVICE LEVEL |
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