GEIA SSB 1.004 : 2009
Current
The latest, up-to-date edition.
FAILURE RATE ESTIMATING
Hardcopy , PDF
English
01-01-2009
Acknowledgments
1 Scope
2 Reference Documents
3 Use Condition Based Reliability Evaluation
4 Failure Rate Estimating Methodology
4.1 Thermal Effects (HTOL Test Extrapolation)
4.1.1 Voltage Acceleration for Microcircuits
4.1.2 Voltage Derating for Discrete Semiconductor
Devices
4.2 Temperature-Humidity-Bias Effects (HAST Test
Extrapolation)
4.3 Thermo-mechanical Effects (Thermal Cycling Test
Extrapolation)
4.4 Thermal Effects for Nonvolatile Memory (NVM) Data
Retention
4.4.1 Data Retention Extrapolation Using the
Arrhenius Life-Temperature Relationship
4.4.2 Data Retention Extrapolation Using the T-Model
4.5 Overall Failure Rate Summary
4.6 Sub-System Level Analysis
5 Deriving Acceleration Test Parameters from Use Condition
Parameters and Sub-System Failure Rate Requirements
5.1 Temperature-Humidity-Bias Effects (HAST Test
Extrapolation)
5.2 Thermo-mechanical Effects (Thermal Cycling Test
Extrapolation)
Provides reference information concerning methods commonly used by the semiconductor industry to estimate failure rates from accelerated test results.
| Committee |
G-12
|
| DevelopmentNote |
Annex to GEIA SSB 1. (12/2005)
|
| DocumentType |
Standard
|
| Pages |
26
|
| PublisherName |
Government Electronics & Information Technology Association
|
| Status |
Current
|
| GEIA SSB 1 : 2000 | GUIDELINES FOR USING PLASTIC ENCAPSULATED MICROCIRCUITS AND SEMICONDUCTORS IN MILITARY, AEROSPACE AND OTHER RUGGED APPLICATIONS |
| GEIA SSB 1.002 : 1999 | ENVIRONMENTAL TESTS AND ASSOCIATED FAILURE MECHANISMS |
| GEIA SSB 1.003 : 2002 | ACCELERATION FACTORS |
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