IEC 60747-9:2019
Current
The latest, up-to-date edition.
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Hardcopy , PDF
English - French
13-11-2019
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
- reverse-blocking IGBT and its related technical contents have been added;
- reverse-conducting IGBT and its related technical contents have been added;
- some parts of the previous edition have been amended, combined or deleted.
| Committee |
TC 47/SC 47E
|
| DocumentType |
Standard
|
| ISBN |
978-2-8322-7530-6
|
| Pages |
160
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Current
|
| Supersedes |
| Standards | Relationship |
| NEN-IEC 60747-9:2019 | Identical |
| BS IEC 60747-9:2019 | Identical |
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