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IEC 62979:2017

Current

Current

The latest, up-to-date edition.

Photovoltaic modules - Bypass diode - Thermal runaway test

Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English - French, English

Published date

10-08-2017

IEC 62979:2017 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

DocumentType
Standard
ISBN
978-2-8322-7291-6
Pages
25
PublisherName
International Electrotechnical Committee
Status
Current

Standards Relationship
UNE-EN 62979:2017 Identical
DIN EN 62979 : 2018-09 Identical
EN 62979:2017 Identical

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