JEDEC JESD 22-C101F : 2013
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components
Hardcopy , PDF
English
01-10-2013
20-01-2023
All packaged semiconductor components, thin film circuits, surface acoustic wave (SAW) components,
opto-electronic components, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these components are to be evaluated according to this standard.
| Committee |
JC-14.1
|
| DocumentType |
Test Method
|
| Pages |
0
|
| PublisherName |
JEDEC Solid State Technology Association
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
| DSCC V62/23612:2023 | MICROCIRCUIT, BiCMOS, ULTRA-LOW-NOISE JESD204B DUAL-LOOP CLOCK JITTER CLEANER, MONOLITHIC SILICON |
| DSCC V62/22614:2022 | MICROCIRCUIT, DIGITAL-LINEAR, 12-BIT ANALOG MONITORING AND CONTROL SOLUTION WITH MULTICHANNEL ADC, DACs. AND TEMPERATURE SENSORS, MONOLITHIC SILICON |
| DSCC V62/24617:2024 | MICROCIRCUIT, DIGITAL, RADIATION-TOLERANT HEX OPEN-DRAIN BUFFERS WITH INTEGRATED TRANSLATION, MONOLITHIC SILICON |
| DSCC 19206A:2024 | MICROCIRCUIT, LINEAR, PRECISION, CMOS INPUT, RRIO, WIDE SUPPLY RANGE, AMPLIFIERS, MONOLITHIC SILICON |
| DSCC V62/18622B:2024 | MICROCIRCUIT, LINEAR, LOW DRIFT, LOW POWER, CMOS VOLTAGE REFERENCE, MONOLITHIC SILICON |
| JEDEC JESD 625B : 2012 | Requirements for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices |
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