MIL-PRF-19500-159 Revision P:2009
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Voltage-Reference, Temperature Compensated, Types 1N821-1, 1N823-1, 1N825-1, 1N827-1, and 1N829-1, Encapsulated (Axial Leaded and Surface Mount Package) and Un-Encapsulated, Radiation Hardened (Total Dose Only), Quality Levels JAN, JANTX, JANTXV, JANS, JANHC and JANKC
04-02-2009
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for 6.2 volts +/-5 percent, silicon, temperature compensated, voltage-reference diodes.
| DevelopmentNote |
Supersedes MIL S 19500/159 (H). (02/2000) P NOTICE 1 - Notice of Validation. (01/2017)
|
| DocumentType |
Standard
|
| Pages |
37
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for 6.2 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance (JANHC and JANKC) are provided for each un-encapsulated device type. Seven levels of radiation hardened assurance (total dose only) are provided for quality levels JANTXV, JANS, JANHC and JANKC devices as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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