MIL-PRF-19500-437 Revision H:2008
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Types 1N5518B-1, 1N5518C-1, 1N5518D-1 Through 1N5546B-1, 1N5546C-1, 1N5546D-1, Encapsulated (Axial Leaded and Surface Mount Package) and Unencapsulated, 5, 2, and 1 Percent Voltage Tolerance, Quality Levels JAN, JANTX, JANTXV, JANHC, and JANKC
25-03-2008
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent.
| DevelopmentNote |
Supersedes MIL S 19500/437 (C) (02/2000)
|
| DocumentType |
Standard
|
| Pages |
71
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each encapsulated device type and two levels of product assurance (JANHC and JANKC) are provided for each un-encapsulated device type die as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |