MIL-PRF-19500-639 Revision A:1998
Current
The latest, up-to-date edition.
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR (No S/S Document)
24-03-1998
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Covers performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications.
| DevelopmentNote |
A NOTICE 1 - Notice of Validation. (02/2003) A NOTICE 2 - Notice of Validation. (07/2011) A NOTICE 3 - Notice of Validation. (05/2016)
|
| DocumentType |
Standard
|
| Pages |
21
|
| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
|
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization-see figure 4), power transistor. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |