MIL-PRF-19500-688 Revision B:2012
Current
The latest, up-to-date edition.
Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Types 2N7002, 2N7002T2, and 2N7002UB, JAN, JANTX, JANTXV, and JANS
03-02-2012
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, transistor.
| DevelopmentNote |
B NOTICE 1 - Notice of Validation. (11/2016) NEW CHILD NOT 2 2021 IS NOW ADD
|
| DocumentType |
Standard
|
| Pages |
27
|
| ProductNote |
NEW CHILD NOT 2 2021 IS NOW ADD
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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