MIL-PRF-19500-689 Revision A Notice 1 - Validation:2019
Current
The latest, up-to-date edition.
Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
English
26-02-2019
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications.
| DocumentType |
Notice
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| Pages |
1
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
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