MIL-PRF-19500-692 Revision B:2015
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Silicon, Types 2N7515, 2N7516, and 2N7517, JANTXV and JANS (No S/S Document)
English
29-07-2015
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor.
| DocumentType |
Standard
|
| Pages |
27
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to five radiation levels (\"M\", \"D\", \"P\", \"L\", \"R\") are provided for JANTXV and JANS product assurance levels.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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