MIL-PRF-19500-717 Base Document:2005
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Non-Hermetic, Epoxy, Surface Mount, Silicon, Bidirectional Transient Voltage Suppressor, Types 1N6036AUG through 1N6072AUG, 1N6036AUJ through 1N6072AUJ, JANP, JANPTX, and JANPTXV
09-05-2005
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the requirements for non-hermetic, epoxy, surface mount 1,500 watt, bi-directional silicon transient voltage suppressor diodes.
| DevelopmentNote |
NOTICE 1 - Notice of Validation. (02/2010) NOTICE 2 - Notice of Validation. (03/2015) NEW CHILD NOT 3 IS NOW ADDED
|
| DocumentType |
Standard
|
| Pages |
19
|
| ProductNote |
NEW CHILD NOT 3 IS NOW ADDED
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for non-hermetic, epoxy, surface mount
1,500 watt, bi-directional silicon transient voltage suppressor diodes. Three levels of product assurance (JANP, JANPTX and JANPTXV) are provided for each device as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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