MIL-PRF-19500-743 Revision C:2015
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Radiation Hardened Silicon, Types 2N7503U8 and 2N7503U8C, JANTXVR, F, G and H and JANSR, F, G and H
28-01-2015
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
| DocumentType |
Standard
|
| Pages |
40
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each encapsulated device type (JANTXV and JANS) as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for unencapsulated devices, JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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