NF EN 62373 : 2006
Current
Current
The latest, up-to-date edition.
BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE, SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)
Published date
12-01-2013
Publisher
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INTRODUCTION
1 Scope
2 Terms and definitions
3 Test equipment
3.1 Equipment
3.2 Requirement for handling
4 Test sample
4.1 Sample
4.2 Packaging
4.3 ESD protection circuit
5 Procedure
5.1 Initial measurement and read point measurement
5.2 Test
5.3 Notes for field MOSFET
5.4 Judgment
Annex A (informative) Wafer level reliability test (WLR test)
Bibliography
Figures
Defines a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).
| DevelopmentNote |
Indice de classement: C96-051 PR NF EN 62373 July 2005 (07/2005)
|
| DocumentType |
Standard
|
| PublisherName |
Association Francaise de Normalisation
|
| Status |
Current
|
| Standards | Relationship |
| DIN EN 62373:2007-01 | Identical |
| EN 62373:2006 | Identical |
| BS EN 62373:2006 | Identical |
| IEC 62373:2006 | Identical |
| I.S. EN 62373:2006 | Identical |
Summarise
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