IEC 60747-8-1:1987
Withdrawn
Semiconductor devices - Discrete devices - Part 8: Field-effecttransistors - Section One: Blank detail specification forsingle-gate field-effect transistors up to 5 W and 1 GHz
Hardcopy , PDF
English - French, Russian
12-30-1987
12-31-2021
FOREWORD
INTRODUCTION
1 Mechanical description
2 Short description
3 Categories of assessed quality
4 Limiting values (absolute maximum rating system)
common to all applications
5 Electrical characteristics
6 Marking
7 Ordering information
8 Test conditions and inspection requirements
9 Group D - Qualification approval tests
10 Additional information (not for inspection purposes)
Annex A (normative) Field-effect transistors
Covers the specific requirements for quality assessment of single gate field-effect transistors (up to 5W and 1 GHz). (Also numbered QC 750112 in the IECQ system).
| Committee |
TC 47/SC 47E
|
| DevelopmentNote |
Also numbered as BS QC750112(1988) (08/2005)
|
| DocumentType |
Standard
|
| Pages |
33
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Withdrawn
|
| Standards | Relationship |
| UTEC 96 090 : 1989 | Identical |
| SAC GB/T 15450 : 1995 | Identical |
| DIN IEC 60747-8-1:1991-07 | Identical |
| IEC 61747-1:1998+AMD1:2003 CSV | Liquid crystal and solid-state display devices - Part 1: Generic specification |
| IEC 60747-4-1:2000 | Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification |
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