IEC 60747-4-1:2000
Withdrawn
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification
Hardcopy , PDF
English
06-16-2000
12-31-2021
FOREWORD
INTRODUCTION
1 Mechanical description
2 Short description
3 Categories of assessed quality
4 Limiting values (absolute maximum rating system)
common to all applications
5 Electrical characteristics
6 Marking
7 Ordering information
8 Test conditions and inspection requirements
9 Group D - Qualification approval tests
10 Additional information (not for inspection purposes)
Annex A (normative) Field-effect transistors
Defines quality assessment procedures in such a manner that electronic components that are released by one participating country as conforming with the requirements of an applicable specification are acceptable equally in all other countries that participate without need for testing further.
| DocumentType |
Standard
|
| Pages |
17
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Withdrawn
|
| Standards | Relationship |
| BS QC750115(2000) : 2000 | Identical |
| BS IEC 60747-4.1 : 2000 | Identical |
| NEN IEC 60747-4-1 : 2000 | Identical |
| BS IEC 60747-4-1:2000 | Identical |
| IEC 60747-8-1:1987 | Semiconductor devices - Discrete devices - Part 8: Field-effecttransistors - Section One: Blank detail specification forsingle-gate field-effect transistors up to 5 W and 1 GHz |
| IEC 60747-10:1991 | Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits |
| IEC 60191-2:2012 DB | Mechanical standardization of semiconductor devices - Part 2: Dimensions |
| IEC 60749:1996+AMD1:2000+AMD2:2001 CSV | Semiconductor devices - Mechanical and climatic test methods |
| IEC 60747-11:1985 | Semiconductor devices. Discrete devices. Part 11: Sectionalspecification for discrete devices |
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