BS EN 62374:2007
Current
The latest, up-to-date edition.
Semiconductor devices. Time dependent dielectric breakdown (TDDB) test for gate dielectric films
31-10-2008
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
4.1 General
4.2 Test structure: capacitor structure
4.3 Area
5 Procedures
5.1 General
5.2 Pre-test
5.3 Test conditions
5.4 Criteria
6 Lifetime estimation
6.1 General
6.2 Acceleration model
6.3 A procedure for a lifetime estimation
7 Lifetime dependence on gate oxide area
Annex A (informative) - Supplementary determining test
condition and data analysis
Bibliography
Gives a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure.
| Committee |
EPL/47
|
| DevelopmentNote |
Supersedes 04/30113827 DC. (10/2008) Earlier was withdrawn (superseded by BS EN 62374-1) in error by publisher, now has been re-instated. (06/2011)
|
| DocumentType |
Standard
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
Provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure
| Standards | Relationship |
| EN 62374:2007 | Identical |
| IEC 62374:2007 | Identical |
| I.S. EN 62374:2007 | Equivalent |
| UNE-EN 62374:2007 | Equivalent |