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EN 62374:2007

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films

Published date

19-10-2007

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1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
  4.1 General
  4.2 Test structure: capacitor structure
  4.3 Area
5 Procedures
  5.1 General
  5.2 Pre-test
  5.3 Test conditions
  5.4 Criteria
6 Lifetime estimation
  6.1 General
  6.2 Acceleration model
  6.3 A procedure for a lifetime estimation
7 Lifetime dependence on gate oxide area
Annex A (informative) - Supplementary determining test
        condition and data analysis
Bibliography

Provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure

Committee
CLC/TC 47X
DocumentType
Standard
PublisherName
European Committee for Standards - Electrical
Status
Current

Standards Relationship
CEI EN 62374 : 2009 Identical
NEN EN IEC 62374 : 2007 Identical
NF EN 62374 : 2008 Identical
DIN EN 62374:2008-02 Identical
I.S. EN 62374:2007 Identical
NBN EN 62374 : 2008 Identical
BS EN 62374:2007 Identical
IEC 62374:2007 Identical
PN EN 62374 : 2007 Identical
UNE-EN 62374:2007 Identical

Sorry this product is not available in your region.