EN 62416:2010
Current
Current
The latest, up-to-date edition.
Semiconductor devices - Hot carrier test on MOS transistors
Published date
04-06-2010
Sorry this product is not available in your region.
FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 Test structures
4 Stress time
5 Stress conditions
6 Sample size
7 Temperature
8 Failure criteria
9 Lifetime estimation method
10 Lifetime requirements
11 Reporting
Bibliography
IEC 62416:2010 describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.
| Committee |
CLC/TC 47X
|
| DocumentType |
Standard
|
| PublisherName |
European Committee for Standards - Electrical
|
| Status |
Current
|
| Standards | Relationship |
| BS EN 62416:2010 | Identical |
| NF EN 62416 : 2010 | Identical |
| NEN EN IEC 62416 : 2010 | Identical |
| I.S. EN 62416:2010 | Identical |
| DIN EN 62416:2010-12 | Identical |
| PN EN 62416 : 2010 | Identical |
| NBN EN 62416 : 2010 | Identical |
| CEI EN 62416 : 2011 | Identical |
| IEC 62416:2010 | Identical |
| UNE-EN 62416:2010 | Identical |
Summarise
Sorry this product is not available in your region.